Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › MOS type semiconductor device having an impurity diffusion layer

MOS type semiconductor device having an impurity diffusion layer

US Patent 6355963 · Granted Mar 12, 2002

Estimated economic value: $245,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Double-rod type shock absorber2016
Hydraulic shock absorber2014
Hydraulic shock absorber2014
Changing a design rule for forming LSI pattern based on evaluating effectiveness2012
Fluid pressure cylinder apparatus having throttle valve2009
Method for planning layout for LSI pattern, method for forming LSI pattern and m2008
Method for planning layout for LSI pattern, method for forming LSI pattern and m2006
Method for fabricating a semiconductor device having a pocket dopant diffused la2006
Nonvolatile semiconductor memory device and method for fabricating the same2006
Semiconductor device and method of fabricating the same2005
Nonvolatile semiconductor memory device and method for fabricating the same2004
Nonvolatile semiconductor memory device which can operate at high speed with low2004