Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming the buried strap and its quantum barrier in deep trench cell capacitors

Methods of forming the buried strap and its quantum barrier in deep trench cell capacitors

US Patent 6344390 · Granted Feb 5, 2002

Estimated economic value: $11,026,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multideposition SACVD reactor2004
Low resistivity deep trench fill for DRAM and EDRAM applications2003
Doped structures containing diffusion barriers2002
Ladder boat for supporting wafers2002
Ladder boat for supporting wafers2002
Multilayered quantum conducting barrier structures2002
Multilayered quantum conducting barrier structures2002
Multilayered quantum conducting barrier structures2002
Structures containing quantum conductive barrier layers2001
Structures containing quantum conductive barrier layers2001
Structures containing quantum conductive barrier layers2001
Variable stoichiometry silicon nitride barrier films for tunable etch selectivit2001