Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method to form crown capacitor for high density DRAM

Method to form crown capacitor for high density DRAM

US Patent 6329243 · Granted Dec 11, 2001

Estimated economic value: $1,021,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fabricating method for a metal oxide semiconductor transistor2009
Method of fabricating semiconductor devices and method of adjusting lattice dist2008
Method of manufacturing semiconductor MOS transistor device2008
Fin field effect transistor and method for manufacturing fin field effect transi2008
Method of cleaning wafer and method of manufacturing gate structure2007
Metal oxide semiconductor transistor2007
Method of removing spacers and fabricating MOS transistor2007
Method of manufacturing MOS transistors2006
Method of manufacturing DRAM capacitor2002
Method of fabricating dual damascene structure using a hard mask2002
Method of fabricating an opening with deep ultra-violet photoresist2001
Method for manufacturing a MOS device with multiple threshold voltages2001