Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure

Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure

US Patent 6316791 · Granted Nov 13, 2001

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Silicon carbide device with stripe-shaped gate electrode and source metallizatio2025
Vertical power semiconductor device including silicon carbide (sic) semiconducto2025
RC snubber with poly silicon resistor and capacitor formed from junction termina2025
Silicon carbide device with a stripe-shaped trench gate structure2025
Multi-device semiconductor chip with electrical access to devices at either side2024
Dual mode current and temperature sensing for SiC devices2024
Silicon carbide device with transistor cell and clamp regions in a well region2024
Method of producing a silicon carbide device with a trench gate2024
Silicon carbide device and method for forming a silicon carbide device2024
SiC device having a dual mode sense terminal, electronic systems for current and2023
Device including power transistor and overcurrent detection logic and method for2023
Power semiconductor device and method2023