Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication of CCD type solid state image pickup device having double-structured charge transfer electrodes

Fabrication of CCD type solid state image pickup device having double-structured charge transfer electrodes

US Patent 6312970 · Granted Nov 6, 2001

Estimated economic value: $29,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

CCD-type solid state image sensor with a wiring arrangement that improves flatne2002
Solid state image sensing element improved in sensitivity and production cost, p2001
CCD type solid state image pickup device having double-structured charge transfe2001
Semiconductor device having barrier metal layer between a silicon electrode and 2001
Solid state image sensor and its fabrication2000
Solid state image sensing element improved in sensitivity and production cost, p2000
Solid state imaging apparatus having a plurality of metal wirings for supplying 2000
Method of making CCD-type solid-state pickup device2000
CCD-type solid-state pickup device and its fabrication method2000
Fabrication process for solid-state image pick-up device with CCD register1999
Semiconductor device1996
Method for manufacturing semiconductor device with reduced junction capacitance1995