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Home › Methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG

Methods of selectively etching polysilicon relative to at least one of deposited oxide, thermally grown oxide and nitride, and methods of selectively etching polysilicon relative to BPSG

US Patent 6306775 · Granted Oct 23, 2001

Estimated economic value: $6,015,000 ⓘ

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