Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for the targeted production of N-type conductive areas in diamond layers by means of ion implantation

Method for the targeted production of N-type conductive areas in diamond layers by means of ion implantation

US Patent 6281037 · Granted Aug 28, 2001

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for producing silicon-based anodes for secondary batteries2022
Device for determining the temperature of a substrate2017
Method for producing a microelectronic semiconductor component2002