Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and apparatus for controlling the thickness of a gate oxide in a semiconductor manufacturing process

Method and apparatus for controlling the thickness of a gate oxide in a semiconductor manufacturing process

US Patent 6271151 · Granted Aug 7, 2001

Estimated economic value: $4,984,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Trenched gate non-volatile semiconductor method with the source/drain regions sp2004
Trenched gate metal oxide semiconductor device and method2003
Method for profiling semiconductor device junctions using a voltage contrast sca2003
Silicon oxide insulator (SOI) semiconductor having selectively linked body2003
Thin oxide anti-fuse2003
Leaky lower interface for reduction of floating body effect in SOI devices2002
Junction profiling using a scanning voltage micrograph2002
Method and apparatus for determining the robustness of memory cells to alpha-par2002
Method for fabricating a trench-gated vertical CMOS device2001
Trenched gate non-volatile semiconductor device with the source/drain regions sp2001
Method for manufacturing asymmetric channel transistor2001
Fully recessed semiconductor method for low power applications with single wrap 2001