Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base

Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base

US Patent 6265275 · Granted Jul 24, 2001

Estimated economic value: $36,367,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods of fabricating integrated circuit devices with components on both sides 2020
Laser device and process for fabricating such a laser device2019
Methods of fabricating integrated circuit devices with components on both sides 2019
Method for making photonic chip with multi-thickness electro-optic devices and r2018
Method of manufacturing a nanostructured spectral filter2018
Laser device and process for fabricating such a laser device2018
Image sensor with reduced spectral and optical crosstalk and method for making t2018
Laser device and process for fabricating such a laser device2018
Method of forming an infrared filter associated with an image sensor2018
Method of optimizing the quantum efficiency of a photodiode2017
Heterojunction bipolar transistor2017
Image sensor with reduced spectral and optical crosstalk and method for making t2017