Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming data storage capacitors in dynamic random access memory cells

Method of forming data storage capacitors in dynamic random access memory cells

US Patent 6204113 · Granted Mar 20, 2001

Estimated economic value: $1,354,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for operating a non-volatile memory2004
Method for measuring an effective channel length of a MOSFET2004
Method for forming a cantilever beam model micro-electromechanical system2004
Process for forming DRAM cell2003
Method for measuring effective gate channel length during C-V method2003
Vertical two-transistor flash memory2002
Method for forming a self-aligned silicide layer2002
High density flash memory cell2001
Method of fabricating flash memory2001
Structure and method for fabricating a field effect transistor with a self-align2001
Flash memory structure and method of manufacture2001
Method of fabricating conductive line structure2001