Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for etching a poly-silicon layer of a semiconductor wafer

Method for etching a poly-silicon layer of a semiconductor wafer

US Patent 6197698 · Granted Mar 6, 2001

Estimated economic value: $1,180,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device2025
Radical-activated etching of metal oxides2025
Method of manufacturing integrated circuit2025
Epitaxial growth methods and structures thereof2025
Field effect transistor with negative capacitance dielectric structures2025
Independent control of stacked semiconductor device2025
Interferometer systems and methods for real time etch process compensation contr2025
Nanostructured channel regions for semiconductor devices2025
Semiconductor device and manufacturing method thereof2024
Gate structures for semiconductor devices2024
Field effect transistors with negative capacitance layers2024
Semiconductor device and manufacturing method thereof2024