{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Optical proximity correction (OPC) method for improving lithography process window", "item": "https://www.patentleaderboard.com/patent/6194104"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Optical proximity correction (OPC) method for improving lithography process window

Optical proximity correction (OPC) method for improving lithography process window

US Patent 6194104 · Granted Feb 27, 2001

Estimated economic value: $2,066,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Extreme ultraviolet (EUV) radiation source apparatus, EUV lithography system, an2025
Apparatus and method for generating an electromagnetic radiation2021
Method of manufacturing semiconductor structure2021
Front opening unified pod with latch structure2014
Large-sized front opening unified wafer POD2014
Statistical in-process quality control sampling based on product stability throu2002