Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing lateral high-Q inductor for semiconductor devices

Method of manufacturing lateral high-Q inductor for semiconductor devices

US Patent 6187647 · Granted Feb 13, 2001

Estimated economic value: $25,854,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Process for the selective control of feature size in lithographic processing2005
Method and structure for modular, highly linear MOS capacitors using nitrogen im2004
Simplified high Q inductor substrate2002
Lateral high-Q inductor for semiconductor devices2001
Simplified high Q inductor substrate2001