Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Dual damascene method comprising ion implanting to densify dielectric layer and forming a hard mask layer with a tapered opening

Dual damascene method comprising ion implanting to densify dielectric layer and forming a hard mask layer with a tapered opening

US Patent 6171951 · Granted Jan 9, 2001

Estimated economic value: $1,232,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Layout structure forming method of sense amplifier and layout structure of sense2025
Anti-fuse array and memory2025
Semiconductor structure and forming method thereof2025
Through vias with test structure2025
Semiconductor structure and method for manufacturing semiconductor structure2025
Semiconductor structure with shielding structure for through silicon via and man2024
Forming method of sense amplifier and layout structure of sense amplifier2024
Method of forming oxide layer on a doped substrate using nitridation and oxidati2024
Power supply housing adapted to redundant power module2022
Methods for forming semiconductor devices2021
Semiconductor device2018
Power supply for redundant power system2018