Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Element isolation method for semiconductor devices including etching implanted region under said spacer to form a stepped trench structure

Element isolation method for semiconductor devices including etching implanted region under said spacer to form a stepped trench structure

US Patent 6165870 · Granted Dec 26, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Touch signal detection apparatus for calibrating quantization error of touch sig2025
EMC filter for electromagnetic regulation of converter and manufacturing method 2025
Repair circuit2005