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Home › Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate

Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate

US Patent 6159758 · Granted Dec 12, 2000

Estimated economic value: $44,968,000 ⓘ

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