Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Deep submicron MOS transistors with a self-aligned gate electrode

Deep submicron MOS transistors with a self-aligned gate electrode

US Patent 6155537 · Granted Dec 5, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Photovoltaic device with oxide layer2017
Photovoltaic device with crystalline layer2014
Anti-reflective photovoltaic module2013
Method for making split gate flash memory cells with high coupling efficiency2001
Fabrication method for increasing the coupling efficiency of ETOX flash memory d2000
Split gate flash memory with minimum over-erase problem2000
Structure of a non-destructive readout dynamic random access memory2000
Method for forming a MOS structure having sidewall source/drain and embedded gat2000
Method of forming local interconnection of a static random access memory1999