Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a semiconductor device having a buried region with higher impurity concentration

Method of manufacturing a semiconductor device having a buried region with higher impurity concentration

US Patent 6146957 · Granted Nov 14, 2000

Estimated economic value: $1,889,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Airway ventilation state calibration system and system for predicting airway def2022
Crown with ring2020