Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for making metal capacitors for deep submicrometer processes for semiconductor integrated circuits

Method for making metal capacitors for deep submicrometer processes for semiconductor integrated circuits

US Patent 6140693 · Granted Oct 31, 2000

Estimated economic value: $5,996,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Two step molding grinding for packaging applications2015
Bonding pad structure to minimize IMD cracking2010
Top via pattern for bond pad structure2008
Bonding pad structure to minimize IMD cracking2006
Mesh pad structure to eliminate IMD crack on pad2005
Self aligned channel implant, elevated S/D process by gate electrode damascene2004
Self aligned channel implant, elevated S/D process by gate electrode damascene2003
Ion mixing between two-step titanium deposition process for titanium salicide CM2002
Self aligned channel implant, elevated S/D process by gate electrode damascene2001
Dual damascene process flow for a deep sub-micron technology2001
Dual damascene process flow for a deep sub-micron technology2001
ESD implantation scheme for 0.35 .mu.m 3.3V 70A gate oxide process1999