Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for manufacturing bipolar transistor capable of suppressing deterioration of transistor characteristics

Method for manufacturing bipolar transistor capable of suppressing deterioration of transistor characteristics

US Patent 6124181 · Granted Sep 26, 2000

Estimated economic value: $86,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Gas compressor, auxiliary storage unit, and gas compression system2025
Control apparatus for internal combustion engine2013
Method of forming an opening in an insulation film over a semiconductor substrat2000