Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for forming a bottom polysilicon electrode of a stacked capacitor for DRAM

Method for forming a bottom polysilicon electrode of a stacked capacitor for DRAM

US Patent 6063661 · Granted May 16, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Coal rock three-dimensional strain field visual system and method under mining i2025
Dehydrogenation method for hydrogen storage materials2022
Speech synthesis system, method and non-transitory computer readable medium with2022
Audio playback device and audio playback method thereof for adjusting text to sp2021
Remote controller and paring method thereof2019
Top-gate transistor array substrate2013
Manufacturing method of a thin film transistor2012
Thin film transistor and manufacturing method thereof2012
Microsensor with ferroelectric material and method for fabricating the same2008
Analog output buffer circuit for flat panel display2008
ISM-band printed antenna for a portion of a circuit board2008
Structure of organic light-emitting TFT LCD and method of making the same2005