{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "MOS transistors with improved gate dielectrics", "item": "https://www.patentleaderboard.com/patent/6060406"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › MOS transistors with improved gate dielectrics

MOS transistors with improved gate dielectrics

US Patent 6060406 · Granted May 9, 2000

Estimated economic value: $71,980,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of making cuprate superconducting material2006
Micromagnetic device for power processing applications and method of manufacture2006
Electro-mechanical device having a charge dissipation layer and a method of manu2006
Optical device with a temperature insensitive optical pathlength2006
Electro-mechanical device having a charge dissipation layer and a method of manu2005
Ferrite film formation method2004
Integrated circuit having a micromagnetic device and method of manufacture there2004
Integrated circuit having a micromagnetic device and method of manufacture there2003
Devices and systems based on novel superconducting material2003
Devices and systems based on novel superconducting material2003
Devices and systems based on novel superconducting material2003
MOS transistors with improved gate dielectrics2003