Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › In-situ deposition of stop layer and dielectric layer during formation of local interconnects

In-situ deposition of stop layer and dielectric layer during formation of local interconnects

US Patent 6060404 · Granted May 9, 2000

Estimated economic value: $8,913,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Metal oxide varistor with reinforced electrodes2024
Wrap-around contact on FinFET2023
Contacts for semiconductor devices2023
High-voltage devices integrated on semiconductor-on-insulator substrate2023
Wrap-around contact on FinFET2022
Semiconductor devices, FinFET devices, and manufacturing methods thereof2022
Memory device with density-controllable dummy fill strategy for near-MRAM perip2021
Contacts for semiconductor devices2021
Semiconductor packages having dummy connectors and methods of forming same2020
Method of forming the gate electrode of field effect transistor2020
Wrap-around contact on FinFET2020
Method of forming the gate electrode of field effect transistor2019