Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance

Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance

US Patent 6045610 · Granted Apr 4, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Neuron and neuromorphic system including the neuron2025
Selection device and memory device using the same2025
Method of fabricating gallium nitride substrate using ion implantation2024
Memory device containing magnetic tunnel junction2024
Organic light-emitting display device including quantum dots2024
Selector and memory device using the same2024
Quantum-dot based on graded-shell structure and manufacturing method of the same2024
Quantum-dot based on multi-shell structure including luminescent dopant2023
Image sensor including quantum dot layer2022
Memory device based on multi-bit perpendicular magnetic tunnel junction2022
Dual image sensor including quantum dot layer2022
Multi-bit magnetic memory device2021