Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of achieving narrow V.sub.T distribution after erase in flash EEPROM

Method of achieving narrow V.sub.T distribution after erase in flash EEPROM

US Patent 6023426 · Granted Feb 8, 2000

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming a three-gate non-volatile flash memory cell using two polysili2023
Headphones2022
Oscillator2020
Charge pump drive circuit with two switch signals2020
Local X-decoder and related memory system with a voltage clamping transistor2020
Band-gap reference circuit2020
Band-gap reference circuit2020
Non-volatile split gate memory cells with integrated high K metal control gates 2020
Voltage detection circuit for charge pump2020
Charge pump drive circuit2020
Systems and methods for detecting and remedying software anomalies2020
Circuit for regulating leakage current in charge pump2020