Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

US Patent 6023082 · Granted Feb 8, 2000

Estimated economic value: $26,112,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Structure and method for controlling band offset and alignment at a crystalline 2003
Structure and method for controlling band offset and alignment at a crystalline 2003
Control system for use when growing thin-films on semiconductor-based materials2003
Control system for use when growing thin-films on semiconductor-based materials2003
Control method and system for use when growing thin-films on semiconductor-based2001
Control method and system for use when growing thin-films on semiconductor-based2001
Generic process for preparing a crystalline oxide upon a group IV semiconductor 2001
Generic process for preparing a crystalline oxide upon a group IV semiconductor 2001
Generic process for preparing a crystalline oxide upon a group IV semiconductor 2000
Generic process for preparing a crystalline oxide upon a group IV semiconductor 2000
Silicon-integrated thin-film structure for electro-optic applications2000
Silicon-integrated thin-film structure for electro-optic applications2000