Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage

Use of multiple slots surrounding base region of a bipolar junction transistor to increase cumulative breakdown voltage

US Patent 6011297 · Granted Jan 4, 2000

Estimated economic value: $4,612,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Reduction of depletion spreading sideways utilizing slots1999
Elimination of radius of curvature effects of p-n junction avalanche breakdown u1999
Use of tungsten filled slots as ground plane in integrated circuit structure1999