Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Reference cell configuration for a 1T/1C ferroelectric memory

Reference cell configuration for a 1T/1C ferroelectric memory

US Patent 5986919 · Granted Nov 16, 1999

Estimated economic value: $626,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Random number generation with ferroelectric random access memory2019
Multi-bit non-volatile random-access memory cells2017
Non-volatile static RAM and method of operation thereof2016
FRAM cell with cross point access2016
Dynamically configurable logic gate using a non-linear element2008
Column decoder configuration for a 1T/1C memory2005
Column decoder configuration for a 1T/1C memory2005
Sense amplifier configuration for a 1T/1C ferroelectric memory2003
Sense amplifier configuration for a 1T/1C ferroelectric memory2003
Sense amplifier configuration for a 1T/1C ferroelectric memory2003
CMOS boosting circuit utilizing ferroelectric capacitors2002
Reference cell configuration for a 1T/1C ferroelectric memory2001