Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a semiconductor memory device with a high dielectric constant capacitor

Method of manufacturing a semiconductor memory device with a high dielectric constant capacitor

US Patent 5981331 · Granted Nov 9, 1999

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having an epitaxial layer and manufacturing method thereof2018
Semiconductor device having a discontinued part between a first insulating film 2018
Semiconductor device2005
Capacitor manufacturing method having dielectric formed before electrode2004
Providing a conductive material in an opening2003
Semiconductor device with capacitor using high dielectric constant film or ferro2002
Stacked capacitor and method of manufacturing same2002
Conductive layer connecting structure and method of manufacturing the same2001
Semiconductor device having a capacitor with a high dielectric constant film2000
Semiconductor device having a capacitor2000
Semiconductor capacitor2000
Semiconductor device with x-ray absorption layer1999