Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming borderless metal to contact structure

Method of forming borderless metal to contact structure

US Patent 5966632 · Granted Oct 12, 1999

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Die inspection sorting system with limiting groove formed on surface of limiting2025
Stacked semiconductor device and method2011
High density memory structure2001
Completely removal of TiN residue on dual damascence process2000
Method of making a resistor utilizing a polysilicon plug formed with a high aspe2000
Method for forming LDD CMOS using double spacers and large-tilt-angle ion implan2000
Method for forming LDD CMOS2000
Method for manufacturing semiconductor devices using double-charged implantation1999
Method of making double-poly MONOS flash EEPROM cell1999
Process for fabricating MOS device having short channel1999
Self-registered cylindrical capacitor of high density DRAMs1999
Semiconductor having self-aligned polysilicon electrode layer1999