Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates

Rapid thermal annealing with absorptive layers for thin film transistors on transparent substrates

US Patent 5950078 · Granted Sep 7, 1999

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Metal oxide semiconductor thin film transistors2013
Selective recrystallization of semiconductor2013
Solution process for fabricating a textured transparent conductive oxide (TCO)2013
Germanium film optical device2012
Germanium film optical device fabricated on a glass substrate2011
Ge imager for short wavelength infrared2011
Method of fabricating a low, dark-current germanium-on-silicon pin photo detecto2010
CMOS active pixel sensor2010
Thermal sensor with a silicon/germanium superlattice structure2010
Germanium phototransistor with floating body2010
Ge short wavelength infrared imager2010
Gallium nitride-on-silicon interface using multiple aluminum compound buffer lay2009