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Home › Radiation emitting semiconductor diode of buried hetero type having confinement region of limited Al content between active layer and at least one inp cladding layer, and method of manufacturing same

Radiation emitting semiconductor diode of buried hetero type having confinement region of limited Al content between active layer and at least one inp cladding layer, and method of manufacturing same

US Patent 5914496 · Granted Jun 22, 1999

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