Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Test site and a method of monitoring via etch depths for semiconductor devices

Test site and a method of monitoring via etch depths for semiconductor devices

US Patent 5900644 · Granted May 4, 1999

Estimated economic value: $1,748,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Conjugation linkers, cell binding molecule-drug conjugates containing the linker2025
Conjugation linkers, cell binding molecule-drug conjugates containing the linker2025
Specific conjugation linkers, specific immunoconjugates thereof, methods of maki2025
Conjugation linkers, cell binding molecule-drug conjugates containing the linker2025
Conjugation linkers, cell binding molecule-drug conjugates containing the linker2025
Transistorless memory cell2025
Gelled electrolyte and preparation method thereof2024
Transistorless memory cell2024
Organic-inorganic hybrid resin, coating material, and composite structure2023
Transistorless memory cell2021
Polymorphism for irinotecan free base2021
Mortar formulation comprising long chain acrylic ester modified vinyl ester poly2020