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Home › Method of etching semiconductor laser device having Al.sub.x Ga.sub.1-x As and Al.sub.v Ga.sub.1-(v+y) In.sub.y P compound

Method of etching semiconductor laser device having Al.sub.x Ga.sub.1-x As and Al.sub.v Ga.sub.1-(v+y) In.sub.y P compound

US Patent 5888844 · Granted Mar 30, 1999

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