Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › SiC/111-V-nitride heterostructures on SiC/SiO.sub.2 /Si for optoelectronic devices

SiC/111-V-nitride heterostructures on SiC/SiO.sub.2 /Si for optoelectronic devices

US Patent 5880491 · Granted Mar 9, 1999

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor photonoic nano communication link method2011
Nano-crystalline, homo-metallic, protective coatings2010
Semiconductor photonic nano communication link apparatus2009
Electro-optical switching using coupled photonic crystal waveguides2008
Electrically pumped Group IV semiconductor micro-ring laser2008
Nano-crystalline, homo-metallic, protective coatings2006
Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well phot2005
Phonon-pumped semiconductor lasers2003
Wavelength-division multiplexed M.times.N.times.M cross-connect switch using act2001
Silicon-based strain-symmetrized GE-SI quantum lasers2000
Photonic time-delay beamsteering system using fiber bragg prism2000
Nanometer-scale silicon-on-insulator photonic componets1998