Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Self-aligned power field effect transistor in silicon carbide

Self-aligned power field effect transistor in silicon carbide

US Patent 5877041 · Granted Mar 2, 1999

Estimated economic value: $7,748,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Edge protection process for semiconductor device fabrication2007
CMOS integrated circuit architecture incorporating deep implanted emitter region2002
Method for making an anti-fuse2002
Silicon corner rounding by ion implantation for shallow trench isolation2001
Radiation hardened dielectric for EEPROM2000
Method for forming complementary wells and self-aligned trench with a single mas1999
Radiation hardened dielectric for EEPROM1998
Process for forming a self-aligned raised source/drain MOS device and device the1998
Method and apparatus for radiation hardened isolation1997
Method for forming complementary patterns in a semiconductor material while usin1990
Carpet sample holder1989
Method of fabricating a twin tub CMOS device1987