Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of growing 4H silicon carbide crystal

Method of growing 4H silicon carbide crystal

US Patent 5873937 · Granted Feb 23, 1999

Estimated economic value: $9,945,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Perform preemptive identification and reduction of risk of failure in computatio2025
Using a machine learning module to perform preemptive identification and reducti2021
Perform preemptive identification and reduction of risk of failure in computatio2021
Method and system for triggering a protocol analyzer2011
Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on enginee2008
Advanced physical vapor transport method and apparatus for growing high purity s2000
Advanced physical vapor transport method and apparatus for growing high purity s2000
Method and apparatus for growing high purity single crystal silicon carbide1999
Method and apparatus for growing high purity single crystal silicon carbide1999
Method and apparatus for growing high purity single crystal silicon carbide1999
Method for growing large silicon carbide single crystals1999
Method of making a low resistivity silicon carbide boule1999