Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same

Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same

US Patent 5837598 · Granted Nov 17, 1998

Estimated economic value: $6,252,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System for interrogating an interferometer, an interferometric system and a meth2021
Full-chip assessment of time-dependent dielectric breakdown2018
Leakage reduction using stress-enhancing filler cells2017
Chip-scale electrothermal analysis2017
Abrasive apparatus and components thereof2016
Determination of electromigration susceptibility based on hydrostatic stress ana2015
Sensing coil and sensing unit for sagnac optical fibre current sensor2013
Method for creating barriers for copper diffusion2010
Method for determining via/contact pattern density effect in via/contact etch ra2010
Method of treating metal and metal salts to enable thin layer deposition in semi2010
Apparatus and method of manufacture for integrated circuit and CMOS device inclu2008
Method of vaporizing and ionizing metals for use in semiconductor processing2008