Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Interconnect run between a first point and a second point in a semiconductor device for reducing electromigration failure

Interconnect run between a first point and a second point in a semiconductor device for reducing electromigration failure

US Patent 5760476 · Granted Jun 2, 1998

Estimated economic value: $5,980,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Induction heating system2024
Thermoelectric element comprising a contact structure and method of making the c2024
Thermoelectric element and method of making the same2023
Thermoelectric device2023
System and method for performing scanning tunneling microscopy on current-carryi2021
Thermoelectric device2019
Systems and methods to facilitate loyalty reward transactions2018
Method and system for conducting a commercial transaction between a buyer and a 2010
Multilayer cavity slot antenna2006
Detergent having improved color retention properties2000
Detergent having improved color retention properties1999
Transistor protection circuit and method1999