Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a semiconductor device having high and low resistance polysilicon

Method of forming a semiconductor device having high and low resistance polysilicon

US Patent 5739059 · Granted Apr 14, 1998

Estimated economic value: $5,118,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Demodulating circuit and the method thereof2017
Three-dimensional electrode and a biological probe comprising the same2017
Medical ventilator capable of early detecting and recognizing types of pneumonia2015
Multi-gate field-effect transistor with enhanced and adaptable low-frequency noi2013
Exponential-logarithmic analog-to-digital converter2013
Data protection method for memory2012
Opposite focus control to avoid keyholes inside a passivation layer2000
In-situ binary PCM code indentifier to verify a ROM code id during processing2000
Procedure for elimating flourine degradation of WSi.sub.x /oxide/polysilicon cap2000
Method for eliminating charging of photoresist on specimens during scanning elec1998
Method of improving uniformity of metal-to-poly capacitors composed by polysilic1997