Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Low parasitic source inductance field-effect transistor device having via connections disposed along an outer periphery thereof

Low parasitic source inductance field-effect transistor device having via connections disposed along an outer periphery thereof

US Patent 5734189 · Granted Mar 31, 1998

Estimated economic value: $13,800,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High output power density radio frequency transistor amplifiers in flat no-lead 2023
GaN amplifier for WiFi applications2017
MMIC power amplifier2016
High efficiency switch-mode power amplifier2009
High efficiency switch-mode power amplifier2007
Method and apparatus for testing circuits containing active devices1995