Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance

Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance

US Patent 5731239 · Granted Mar 24, 1998

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Systems and methods for integrated shielding in a current sensor2025
Fabricating planarized coil layer in contact with magnetoresistance element2023
Fabricating a coil above and below a magnetoresistance element2023
Photosensitive candle2022
Method and apparatus for eliminating bit disturbance errors in non-volatile memo2022
Photodetector with a buried layer2022
Systems and methods for integrated shielding in a current sensor2022
Photodetector with a buried layer2022
Method and apparatus for eliminating EEPROM bit-disturb2021
Electronic circuit structure and method of fabricating electronic circuit struct2020
Signal isolator having interposer2020
Methods for patterning a magnetic sensing layer2020