Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Formation of self-aligned overlapping bitline contacts with sacrificial polysilicon fill-in stud

Formation of self-aligned overlapping bitline contacts with sacrificial polysilicon fill-in stud

US Patent 5723381 · Granted Mar 3, 1998

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Chemical vapor deposition chamber with dual frequency bias and method for manufa2010
Method for etching high-aspect-ratio features2005
Method of forming multi-level coplanar metal/insulator films using dual damascen2001
Distribution plate for a reaction chamber with multiple gas inlets and separate 2001
Method for patterning integrated circuit conductors2000
Etching high aspect contact holes in solid state devices1999
Low pressure and low power C1.sub.2 /HC1 process for sub-micron metal etching1999
Process for reducing circuit damage during PECVD in single wafer PECVD system1999
Three-dimensional device layout with sub-groundrule features1999
Polycide etching with HCL and chlorine1999
Methods for metal etching with reduced sidewall build up during integrated circu1998
Avoidance of pattern shortening by using off axis illumination with dipole and p1998