Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making porous-Si capacitors for high density drams cell

Method of making porous-Si capacitors for high density drams cell

US Patent 5723373 · Granted Mar 3, 1998

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure and fabrication method thereof2012
Semiconductor structure and fabrication method thereof2012
Lateral diffused metal oxide semiconductor (LDMOS) devices with electrostatic di2011
High switching speed two mask schottky diode with high field breakdown2009
Silicon carbide Schottky diode and method of making the same2008
Method of forming an N channel and P channel finfet device on the same semicondu2007
Schottky barrier diode and method of making the same2006
Schottky barrier diode and method of making the same2006
High switching speed two mask Schottky diode with high field breakdown2006
Two mask shottky diode with locos structure2005
Schottky diode with high field breakdown and low reverse leakage current2004
Method of forming an N channel and P channel FINFET device on the same semicondu2004