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Home › Process for suppressing boron penetration in BF.sub.2 .sup.+ -implanted P.sup.+ -poly-Si gate using inductively-coupled nitrogen plasma

Process for suppressing boron penetration in BF.sub.2 .sup.+ -implanted P.sup.+ -poly-Si gate using inductively-coupled nitrogen plasma

US Patent 5629221 · Granted May 13, 1997

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