Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Quantum dot-tunnel device which can be selectively excited by a first light emitting source and the information thus stored can be read with a second light emitting source

Quantum dot-tunnel device which can be selectively excited by a first light emitting source and the information thus stored can be read with a second light emitting source

US Patent 5613140 · Granted Mar 18, 1997

Estimated economic value: $313,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Insulating structure of ventilation path of salient-pole rotor2021
Nonvolatile semiconductor storage device and its manufacturing method2009
Nonvolatile semiconductor storage device and production method therefor2006
Memory device, method of manufacturing the same, and integrated circuit2003
Methods for fabricating memory devices2002
Memory device2000
Quantum dot-tunnel device and information processing apparatus and method using 1997
Semiconductor device1992
Heterojunctional collector-top type bi-polar transistor1990