Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for patterning and etching film layers of semiconductor devices

Method for patterning and etching film layers of semiconductor devices

US Patent 5607601 · Granted Mar 4, 1997

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Tuning gas cluster ion beam systems2023
Compensated location specific processing apparatus and method2020
Compensated location specific processing apparatus and method2019
Gas cluster ion beam etching process for etching Si-containing, Ge-containing, a2016
Multiple nozzle gas cluster ion beam system2015
System, apparatus, and method for tracking atmospheric differential absorption2014
Gas cluster ion beam etching process for metal-containing materials2013
Gas cluster ion beam etching process for achieving target etch process metrics f2013
Gas cluster ion beam etching process for Si-containing and Ge-containing materia2013
Method for depositing hydrogenated diamond-like carbon films using a gas cluster2013
Method of irradiating substrate with gas cluster ion beam formed from multiple g2012
Method for selectively etching areas of a substrate using a gas cluster ion beam2012