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Home › Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage

Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage

US Patent 5581194 · Granted Dec 3, 1996

Estimated economic value: $4,546,000 ⓘ

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