{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Post metal mask ROM with thin glass dielectric layer formed over word lines", "item": "https://www.patentleaderboard.com/patent/5567970"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Post metal mask ROM with thin glass dielectric layer formed over word lines

Post metal mask ROM with thin glass dielectric layer formed over word lines

US Patent 5567970 · Granted Oct 22, 1996

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Non-volatile memory device and manufacturing method thereof2022
Memory structure and manufacturing method thereof2021
Sprayer head2021
Apparatus for positioning heat sink2018
Device under test array for identifying defects2010
Photosensitive device2008
Flash memory cell and manufacturing method thereof2007
Method of fabricating a photosensitive structure2006
Method for manufacturing one-time electrically programmable read only memory2006
Parasitic capacitance-preventing dummy solder bump structure and method of makin2006
Flash memory cell2005
Dual damascene process using metal hard mask2004