Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a semiconductor device having a vertical insulated gate FET and a breakdown region remote from the gate

Method of forming a semiconductor device having a vertical insulated gate FET and a breakdown region remote from the gate

US Patent 5527720 · Granted Jun 18, 1996

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Secondary disengage alert for autonomous vehicles2025
Testing situational awareness of drivers tasked with monitoring a vehicle operat2024
Monitoring head movements of drivers tasked with monitoring a vehicle operating 2024
Secondary disengage alert for autonomous vehicles2023
Comfort scales for autonomous driving2023
Psychomotor vigilance testing for persons tasked with monitoring autonomous vehi2023
Fatigue monitoring system for drivers tasked with monitoring a vehicle operating2023
Vehicle mechanisms that alter a vehicle cabin to reduce motion sickness2023
Systems and methods for detecting and dynamically mitigating driver fatigue2023
Secondary disengage alert for autonomous vehicles2023
Systems and methods for detecting and dynamically mitigating driver fatigue2022
Surface processing apparatus2022